IXFN32N80P datasheet(1/4 Pages) IXYS

Nome de Peças	IXFN32N80P

Descrição Electrónicos	PolarHV HiPerFET Power MOSFET

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Fabricante Electrônico	IXYS [IXYS Corporation]

Página de início	http://www.ixys.com

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DS99605E(08/06)

PolarHVTM HiPerFET

Power MOSFET

V

DSS

= 800

V

I

D25

=

25

A

R

DS(on) ≤

≤≤≤≤ 270 mΩ

Ω

t

rr

≤≤≤≤≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 3 mA

800

V

GS(th)

V

DS

= V

GS, ID = 8 mA

3.0

5.0

V

I

GSS

V

GS = ±30 V, VDS = 0 V

±200

nA

I

DSS

V

DS

= V

DSS

25

μA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 16A, Note 1

270

m

Ω

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

800

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C29

A

I

DM

T

C = 25°C, pulse width limited by TJM

250

A

I

AR

T

C = 25°C30

A

E

AR

T

C = 25°C

100

mJ

E

AS

T

C = 25°C5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,

10

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C = 25°C

625

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5 / 13 Nm/lb.in.

Terminal connection torque

1.5 / 13 Nm/lb.in.

Weight

30

g

IXFN32N80P

G

D

S

miniBLOC, SOT-227 B (IXFN)

E153432

G = Gate

D = Drain

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

l

Fast recovery diode

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

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