7N60G-X-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

7N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-076,Ja

ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

7N60-A

600

Drain-Source Voltage

7N60-B

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

7.4

Continuous

7.4

Drain Current

Pulsed (Note 2)

IDM

29.6

Single Pulsed (Note 3)

EAS

530

Avalanche Energy

Repetitive (Note 2)

EAR

14.2

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

142

Power Dissipation

TO-220F/TO-220F1

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220/TO-262/TO-263

62.5

°C/W

Junction to Ambient

TO-220F/TO-220F1

θJA

62.5

°C/W

TO-220/TO-262/TO-263

0.88

°C/W

Junction to Case

TO-220F/TO-220F1

θJC

2.6

°C/W

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

7N60-A

600

Drain-Source Breakdown Voltage

7N60-B

BVDSS

VGS = 0V, ID = 250μA

650

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

μA

Forward

VGS = 30V, VDS = 0V

100

Gate- Source Leakage Current

Reverse

IGSS

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature

Coefficient

△

BVDSS/△TJ

ID = 250μA,

Referenced to 25°C

0.67

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.0

4.0

7N60

1.0

Ω

7N60-F

1.2

Ω

7N60-M

1.2

Ω

7N60-Q

1.2

Ω

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 3.7A

7N60-R

1.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1400

Output Capacitance

COSS

180

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

170

Turn-Off Delay Time

tD(OFF)

140

Turn-Off Fall Time

VDD =300V, ID =7.4A, RG =25Ω

(Note 1, 2)

130

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