5N60G-X-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

5N60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-065,F

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

5N60-A

600

Drain-Source Voltage

5N60-B

VDSS

650

Gate-Source Voltage

VGSS

±30

Avalanche Current (Note 2)

IAR

4.5

Continuous Drain Current

4.5

Pulsed Drain Current (Note 2)

IDM

Single Pulsed (Note 3)

EAS

210

Avalanche Energy

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

100

TO-220F/TO-220F1

Power Dissipation

TO-251 / TO-252

Junction Temperature

+150

°C

Operation Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by TJ(MAX)

L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F/TO-220F1

62.5

Junction-to-Ambient

TO-251 / TO-252

θJA

160

°C/W

TO-220

1.25

TO-220F/TO-220F1

3.47

Junction-to-Case

TO-251 / TO-252

θJC

2.3

°C/W

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