3LN01M-AL3-R datasheet(1/3 Pages) UTC

Nome de Peças	3LN01M-AL3-R

Descrição Electrónicos	N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS

PDF	3 Pages

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Fabricante Electrônico	UTC [Unisonic Technologies]

Página de início	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

3LN01M

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-285.a

N CHANNEL SILICON

MOSFET GENERAL-PURPOSE

SWITCHING DEVICE

APPLICATIONS

DESCRIPTION

The 3LN01M uses UTC advanced technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device’s general purpose is for switching device

applications.

FEATURES

* RDS(ON) = 3.7Ω @VGS = 4 V

* Ultra low gate charge ( typical 1.58 nC )

* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

2.Gate

1.Source

3.Drain

Lead-free:

3LN01ML

Halogen-free: 3LN01MG

ORDERING INFORMATION

Ordering Number

Pin Assignment

Normal

Lead Free

Halogen-Free

Package

1

2

3

Packing

3LN01M-AL3-R

3LN01ML-AL3-R

3LN01MG-AL3-R

SOT-323

S

G

D

Tape Reel

MARKING

Nº de peça semelhante - 3LN01M-AL3-R

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
ON Semiconductor	3LN01M-TL-E	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1
ON Semiconductor	3LN01M-TL-H	301Kb / 5P	Small Signal MOSFET November 2014 - Rev. 1

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Descrição semelhante - 3LN01M-AL3-R

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3LN01M-AL3-R Folha de dados(PDF) 1 Page - Unisonic Technologies

3LN01M-AL3-R Folha de dados(HTML) 1 Page - Unisonic Technologies

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