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2SD1624-X-AB3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 2SD1624-X-AB3-R
Descrição Electrónicos  HIGH CURRENT SWITCHIG APPLICATION
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1624-X-AB3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

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2SD1624
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-005.C
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
Collector Power Dissipation( Tc=25
°C)
Pc
500
mW
DC
Ic
3
A
Collector Current
PULSE
Icp
6
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=10μA, IE=0
60
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, RBE=∞
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, IC=0
6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=100mA
0.19
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2A, IB=100mA
0.94
1.2
V
Collector Cut-Off Current
ICBO
VCB=40V, IE=0
1
μA
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
1
μA
DC Current Gain
hFE
VCE=2V, Ic=100mA
100
560
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
150
MHz
Output Capacitance
Cob
VCE=10V, f=1MHz
25
pF
Turn-ON Time
tON
See test circuit
70
ns
Storage Time
tSTG
See test circuit
650
ns
Fall Time
tF
See test circuit
35
ns
CLASSIFICATION OF hFE
RANK
R
S
T
U
RANGE
100-200
140-280
200-400
280-560



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