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2SD1060-X-TN3-R Folha de dados(PDF) 2 Page - Unisonic Technologies

Nome de Peças 2SD1060-X-TN3-R
Descrição Electrónicos  NPN PLANAR SILICON TRANSISTOR
PDF  5 Pages
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Fabricante Electrônico  UTC [Unisonic Technologies]
Página de início  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD1060-X-TN3-R Folha de dados(HTML) 2 Page - Unisonic Technologies

  2SD1060-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SD1060-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SD1060-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies 2SD1060-X-TN3-R Datasheet HTML 4Page - Unisonic Technologies 2SD1060-X-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SD1060
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-023.C
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Current (Pulse)
ICP
9
A
SOT-89
500
mW
TO-126/TO-251
1
W
TO-252/TO-220
2
W
Collector Dissipation
TO-92
PC
625
mW
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-to-Base Breakdown Voltage
BVCBO
IC =1mA, IE=0
60
V
Collector-to-Emitter Breakdown Voltage
BVCEO
IC=1mA, RBE =∞
50
V
Emitter-to-Base Breakdown Voltage
BVEBO
IC =0, IE=1mA
6
V
Collector Cut-Off Current
ICBO
VCB=40V, IE=0
0.1
mA
Emitter Cut-Off Current
IEBO
VEB=4V, IC=0
0.1
mA
hFE1
VCE=2V, IC=1A
70
360
DC Current Gain
hFE2
VCE=2V, IC=3A
30
Gain Bandwidth Product
fT
VCE =5V, IC =1A
30
MHZ
Output Capacitance
Cob
VCB =10V, f=1MHz
100
pF
Collector-to-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=0.3A
0.4
V
Turn-ON Time
tON
See specified test circuit
0.1
µs
Storage Time
tSTG
See specified test circuit
1.4
µs
Fall Time
tF
See specified test circuit
0.2
µs
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360



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