2SB1260-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1260

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 4

www.unisonic.com.tw

QW-R208-017,E

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-80

Collector -Emitter Voltage

VCEO

-80

Emitter -Base Voltage

VEBO

-5

Peak Collector Current (single pulse, Pw=100ms)

ICM

-2

DC Collector Current

-1

SOT-89

0.5

Power Dissipation

TO-252

1.9

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm

2 or larger.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Base Breakdown Voltage

BVCBO

IC= -50μA

-80

Collector Emitter Breakdown Voltage

BVCEO

IC= -1mA

-80

Emitter Base Breakdown Voltage

BVEBO

IE= -50μA

-5

Collector Cut-Off Current

ICBO

VCB=-60V

-1

μA

Emitter Cut-Off Current

IEBO

VEB=-4V

-1

μA

DC Current Gain(Note 1)

hFE

VCE=-3V, IOUT=-0.1A

390

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-500mA, IB=-50mA

-0.4

Transition Frequency

VCE= -5V, IE=50mA, f=30MHz

100

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

CLASSIFICATION OF hFE

RANK

RANGE

82 ~ 180

120 ~ 270

180 ~ 390

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