2SA684L-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SA684

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R211-006.C

ABSOLUTE MAXIMUM RATINGS ( Ta=25℃ ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Peak Collector Current

ICP

-1.5

Collector Current (DC)

-1

SOT-89

500

Collector Dissipation

TO-92NL

1000

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-10μA, IE=0

-60

Collector-Emitter Breakdown Voltage

BVCEO

IC=-2mA, IB=0

-50

Emitter-Base Breakdown Voltage

BVEBO

IE=-10μA, IC =0

-5

Collector Cut-Off Current

ICBO

VCB=-20V, IE=0

-0.1

μA

hFE1

VCE=-10V, IC=-500mA

340

DC Current Gain

hFE2

VCE=-5V, IC=-1A

Collector-Emitter Saturation Voltage

VCE(SAT) IC=-0.5A, IB=-50mA

-0.2

-0.4

Base-Emitter Saturation Voltage

VBE(SAT) IC=-0.5A, IB=-50mA

-0.85

-1.2

Current Gain Bandwidth Product

VCE=-10V, IB=50mA, f=200MHz

200

MHz

Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

CLASSIFICATION OF hFE1

RANK

RANGE

85-170

120-240

170-340

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