BF904_07 datasheet(7/14 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

N-channel dual gate MOS-FETs

BF904; BF904R

Fig.12 Drain current as a function of gate 1

supply voltage (= VGG); typical values;

see Fig.20.

VDS = 5 V; VG2-S =4V.

RG1 = 120 kΩ (connected to VGG); Tj =25 °C.

handbook, halfpage

MLD275

I D

(mA)

(V)

Fig.13 Drain current as a function of gate 1

(= VGG) and drain supply voltage;

typical values; see Fig.20.

VG2-S =4V.

RG1 connected to VGG; Tj =25 °C.

handbook, halfpage

MLD274

= V

(V)

I D

(mA)

= 47 k

Ω

68 k

Ω

82 k

Ω

100 k

Ω

120 k

Ω

150 k

Ω

180 k

Ω

220 k

Ω

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG).

Fig.14 Drain current as a function of gate 2 voltage;

typical values; see Fig.20.

handbook, halfpage

024

MLD276

I D

(mA)

4.5 V

4 V

3.5 V

3 V

(V)

G2 S

= 5 V

Fig.15 Gate 1 current as a function of gate 2

voltage; typical values; see Fig.20.

VDS = 5 V; Tj =25 °C.

RG1 = 120 kΩ (connected to VGG).

handbook, halfpage

MLB945

I G1

(

µA)

(V)

G2 S

4.5 V

4 V

3.5 V

3 V

= 5 V

Rev. 06 - 13 November 2007

7 of 14

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