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MIC2199BML Folha de dados(PDF) 12 Page - Micrel Semiconductor |
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MIC2199BML Folha de dados(HTML) 12 Page - Micrel Semiconductor |
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12 / 14 page ![]() January 2010 12 M9999-011310 Micrel, Inc. MIC2199 Voltage Setting Components The MIC2199 requires two resistors to set the output voltage as shown in Figure 6. Error Amp 3 MIC2199 FB VREF 0.8V R2 R1 Figure 6. Voltage-Divider Configuration The output voltage is determined by the equation: VV 1 R1 R2 O REF =× + Where: VREF for the MIC2199 is typically 0.8V. A typical value of R1 can be between 3k and 10k. If R1 is too large it may allow noise to be introduced into the volt- age feedback loop. If R1 is too small in value it will decrease theefficiencyofthepowersupply,especiallyatlowoutput loads. Once R1 is selected, R2 can be calculated using: R2 VR1 VV REF O REF = × − Voltage Divider Power Dissipation The reference voltage and R2 set the current through the voltage divider. I V R2 DIVIDER REF = The power dissipated by the divider resistors is: P(R1 R2) I DIVIDER DIVIDER 2 =+ × Efficiency Calculation and Considerations Efficiencyistheratioofoutputpowertoinputpower.The difference is dissipated as heat in the buck converter. Under lightoutputload,thesignificantcontributorsare: • SupplycurrenttotheMIC2199 • MOSFETgate-chargepower(includedintheIC supply current) • Corelossesintheoutputinductor Tomaximizeefficiencyatlightloads: • Usealowgate-chargeMOSFETorusethesmall- estMOSFET,whichisstilladequateformaximum output current. • Useaferritematerialfortheinductorcore,which has less core loss than an MPP or iron power core. Underheavyoutputloadsthesignificantcontributorstopower loss are (in approximate order of magnitude): • Resistiveon-timelossesintheMOSFETs • SwitchingtransitionlossesintheMOSFETs • Inductorresistivelosses • Current-senseresistorlosses • Inputcapacitorresistivelosses(duetothecapaci- torsESR) To minimize power loss under heavy loads: • Use logic-level, low on-resistance MOSFETs. Multiplying the gate charge by the on-resistance givesafigureofmerit,providingagoodbalance betweenlowandhighloadefficiency. • Slowtransitiontimesandoscillationsonthevoltage andcurrentwaveformsdissipatemorepowerduring turn-onandturnoffoftheMOSFETs.Acleanlayout will minimize parasitic inductance and capacitance in the gate drive and high current paths. This will allow the fastest transition times and waveforms withoutoscillations.Lowgate-chargeMOSFETs will transition faster than those with higher gate- charge requirements. • For the same size inductor, a lower value will have fewer turns and therefore, lower winding re- sistance. However, using too small of a value will requiremoreoutputcapacitorstofiltertheoutput ripple, which will force a smaller bandwidth, slower transient response and possible instability under certain conditions. • Lowering the current-sense resistor value will decrease the power dissipated in the resistor. However, it will also increase the overcurrent limitandwillrequirelargerMOSFETsandinductor components. • Use low-ESR input capacitors to minimize the powerdissipatedinthecapacitorsESR. |
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