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DMP4050SSD Folha de dados(PDF) 4 Page - Diodes Incorporated |
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DMP4050SSD Folha de dados(HTML) 4 Page - Diodes Incorporated |
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4 / 8 page ![]() DMP4050SSD Document Number DS32107 Rev 2 - 2 4 of 8 www.diodes.com November 2010 © Diodes Incorporated A Product Line of Diodes Incorporated DMP4050SSD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40 ⎯ ⎯ V ID = -250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 μA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 ⎯ -3.0 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS (ON) ⎯ 0.038 0.050 Ω VGS = -10V, ID = -6A 0.055 0.079 VGS = -4.5V, ID = -5A Forward Transconductance (Notes 9 & 10) gfs ⎯ 14 ⎯ S VDS = -15V, ID = -6A Diode Forward Voltage (Note 9) VSD ⎯ -0.86 -1.2 V IS = -6A, VGS = 0V Reverse recovery time (Note 10) trr 18 ⎯ ns IS = -2A, di/dt = 100A/μs Reverse recovery charge (Note 10) Qrr ⎯ 12.7 ⎯ nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss ⎯ 674 ⎯ pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 115 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 67.7 ⎯ pF Total Gate Charge (Note 11) Qg ⎯ 6.9 ⎯ nC VGS = -4.5V VDS = -20V ID = -6A Total Gate Charge (Note 11) Qg ⎯ 13.9 ⎯ nC VGS = -10V Gate-Source Charge (Note 11) Qgs ⎯ 2 ⎯ nC Gate-Drain Charge (Note 11) Qgd ⎯ 3.4 ⎯ nC Turn-On Delay Time (Note 11) tD(on) ⎯ 1.9 ⎯ ns VDD = -20V, VGS = -10V ID = -1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 11) tr ⎯ 3.1 ⎯ ns Turn-Off Delay Time (Note 11) tD(off) ⎯ 31.5 ⎯ ns Turn-Off Fall Time (Note 11) tf ⎯ 12.6 ⎯ ns Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures. |
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