STTH110A datasheet(2/6 Pages) STMICROELECTRONICS

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Characteristics

STTH110

2/6

Doc ID 9344 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.20 x IF(AV) + 0.225 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

1000

V(RMS) Voltage rms

700

IF(AV)

Average forward current

SMA

TL = 110 °C δ = 0.5

DO-41

TL = 125 °C δ = 0.5

IFSM

Forward Surge current

t = 8.3 ms

SMA

DO-41

Tstg

Storage temperature range

-50 to + 175

°C

Maximum operating junction temperature

175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

Lead length = 10 mm

DO-41

Rth(j-a)

Junction to ambient

Lead length = 10 mm

DO-41

110

Table 4.

Static Electrical Characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

Reverse leakage

current

Tj = 25 °C

VR = 1000 V

µA

Tj = 125 °C

Forward voltage drop

Tj = 25 °C

IF = 1 A

1.7

Tj = 125 °C

0.98

1.42

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse

recovery time

Tj = 25 °C

IF = 0.5, A

Irr = 0.25 A,

IR = 1 A

tfr

Forward

recovery time

Tj = 25 °C

IF = 1 A,

dIF/dt = 50 A/ms

VFR = 1.1 x

VFmax

300

VFP

Forward

recovery voltage

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