STPS10150C datasheet(3/9 Pages) STMICROELECTRONICS

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STPS10150C

Characteristics

3/9

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.001

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak

forward current versus overload

duration - maximum values, per

diode (TO-220AB, D2PAK)

Figure 6.

Non repetitive surge peak forward

current versus overload duration

- maximum values, per diode

(TO-220FPAB)

1E-3

1E-2

1E-1

1E+0

t(s)

I(A)

Tc=50°C

Tc=75°C

Tc=125°C

δ=0.5

1.E-3

1.E-2

1.E-1

1.E+0

C=50 °C

C=75 °C

C=125 °C

d =0.5

t(s)

I(A)

Figure 7.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB, D2PAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220FPAB)

0.1

1.0

1.E-3

1.E-2

1.E-1

1.E+0

Single pulse

TO-220AB

D²PAK

Zth(j-c)/Rth(j-c)

tp(s)

0.0

0.1

1.0

1.E-3

1.E-2

1.E-1

1.E+0

1.E+1

Single pulse

TO-220FPAB

Zth(j-c)/Rth(j-c)

tp(s)

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