2SC2905 datasheet(1/1 Pages) ASI

Nome de Peças	2SC2905

Descrição Electrónicos	NPN SILICON RF POWER TRANSISTOR

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Fabricante Electrônico	ASI [Advanced Semiconductor]

Página de início	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCEO

IC = 1.0 A

17

V

BVCBO

IC = 10 mA

35

BVEBO

IE = 10 mA

4.0

V

ICBO

VCB = 15 V

2.0

mA

IEBO

VCE = 3.0 V

3.0

mA

hFE

VCE = 10 V

IC = 1.0 A

10

200

---

Cob

VCB = 12.5 V

f = 1.0 MHz

150

pF

PG

ηηηη

C

VCE = 12.5 V

POUT = 45 W

f = 520 MHz

4.8

60

65

dB

%

NPN SILICON RF POWER TRANSISTOR

2SC2905

DESCRIPTION:

The

ASI 2SC2905 is designed for

high power amplifier applications in

UHF band.

FEATURES:

• Emitter Ballasted construction.

• P

G = 4.8 dB at 45 W/520 MHz

• Omnigold™ Metalization System

• Common Emitter

MAXIMUM RATINGS

IC

15 A

VCBO

35 V

VCEO

17 V

VCES

36 V

VEBO

4.0 V

PDISS

120 W @ TC = 25°C

TJ

-55 °C to +175 °C

TSTG

-55 °C to +175 °C

θθθθ

JC

1.0 °C/W

PACKAGE STYLE .500 6L FLG

MIN IMU M

inche s / m m

.490 / 12.45

.210 / 5.33

.003 / 0.08

B

C

D

E

F

G

A

MAX IMU M

.220 / 5.59

.007 / 0.18

.510 / 12.95

inche s / m m

.725 / 18.42

H

DIM

K

L

I

J

.970 / 24.64

.980 / 24.89

.170 / 4.32

N

M

.120 / 3.05

.135 / 3.43

.150 / 3.43

.160 / 4.06

.125 / 3.18

.090 / 2.29

.105 / 2.67

.285 / 7.24

.150 / 3.81

.045 / 1.14

E

F

.7 25/18 ,4 2

I

G

J

K

L

M

A

D

C

B

2x Ø N

FU LL R

H

.835 / 21.21

.865 / 21.97

.210 / 5.33

.200 / 5.08

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