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MRF9100LSR3 Folha de dados(PDF) 8 Page - Freescale Semiconductor, Inc

Nome de Peças MRF9100LSR3
Descrição Electrónicos  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
PDF  12 Pages
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Fabricante Electrônico  FREESCALE [Freescale Semiconductor, Inc]
Página de início  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF9100LSR3 Folha de dados(HTML) 8 Page - Freescale Semiconductor, Inc

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8
RF Device Data
Freescale Semiconductor
MRF9100LR3 MRF9100LSR3
TYPICAL CHARACTERISTICS
1000
10
20
800
−25
0
IRL
Gps
Pout = 30 W
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Output Power
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
Pout = 30 W
100 W
100 W
18
−5
16
−10
14
−15
12
−20
975
950
925
900
875
850
825
6
0
160
0
0
56
Pin, INPUT POWER (WATTS)
Figure 6. Output Power and Efficiency versus
Input Power
140
49
120
42
100
35
80
28
60
21
40
14
20
7
5
4
3
2
1
Pout
VDD = 26 Vdc
IDQ = 800 mA
TC = 25_C
η
865 MHz
960 MHz
960 MHz
865 MHz
1000
15
19
1
IDQ = 1200 mA
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Input Return Loss
versus Frequency
VDD = 26 Vdc
f = 920 MHz
TC = 25_C
100
10
18
17
16
IDQ = 600 mA
IDQ = 800 mA
IDQ = 1000 mA
1000
12
19
1
TC = −20_C
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain versus Output Power
VDD = 26 Vdc
IDQ = 800 mA
f = 920 MHz
18
17
16
15
14
13
10
100
25
_C
85
_C
Figure 9. EVM and Efficiency versus Output
Power
Figure 10. Spectral Regrowth versus Output
Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
8
6
0
10
1
2
EVM
20
50
40
30
0
10
η
Pout, OUTPUT POWER (WATTS) AVG.
100
−75
−60
VDD = 28 Vdc
IDQ = 800 mA
f = 945 MHz
−65
−70
−85
10
0
−80
@ 400 kHz
@ 600 kHz
−50
−55
1



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