IP Semiconductor Co., Ltd.

IPT12Q06-xxB

High current density due to double mesa technology;

SIPOS and Glass Passivation. IPT12Q06-xx series are

suitable for general purpose AC Switching.

They can be used as an ON/OFF function In application

such as static relays, heating regulation, Induction

motor stating circuits… or for phase Control operation

light dimmers, motor speed Controllers.

MAIN FEATURES

ABSOLUTE MAXIMUM RATINGS

1

TO-220B

Symbol

Value

Unit

12

A

600

V

≤ 1.55

V

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

Tj

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Tj = 25℃

Repetitive Peak Reverse Voltage

600

600

V

Non Repetitive Peak Off-state Voltage

Tj = 25℃

Non Repetitive Peak Reverse Voltage

700

700

V

RMS on

–state current

Tc = 79 ℃

(Full sine wave)

12

A

Non repetitive surge peak on

–state Current f = 60Hz t = 16.7ms

(full cycle, Tj = 25℃)

f = 50 Hz t = 20ms

126

120

A

I²t Value for fusing

I²t

78

A²s

Critical Rate of rise of on-state current

dI / dt

50

A/us

Peak gate current

4

A

Average gate power dissipation

Tj = 125 ℃

1

W