IPW60R099CP_08 datasheet(1/11 Pages) INFINEON

Nome de Peças	IPW60R099CP

Descrição Electrónicos	Cool MOS Power Transistor Feature new revolutionary high voltage technology

PDF	11 Pages

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Fabricante Electrônico	INFINEON [Infineon Technologies AG]

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IPW60R099CP

CoolMOS

TM Power Transistor

Features

• Lowest figure-of-merit RON x Qg

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Ultra low gate charge

CoolMOS CP is specially designed for:

• Hard switching SMPS topologies for Server and Telecom

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=11 A, V DD=50 V

800

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=11 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

Value

31

19

93

±30

255

-55 ... 150

1.2

11

50

±20

V DS @ Tj,max

650

V

R DS(on),max

0.099

Ω

Q g,typ

60

nC

Product Summary

Type

Package

Ordering Code

Marking

IPW60R099CP

PG-TO247-3-1

SP000067147

6R099

PG-TO247-3-1

Rev. 2.1

page 1

2008-02-19

Please note the new package dimensions arccording to PCN 2009-134-A

Nº de peça semelhante - IPW60R099CP_08

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	IPW60R099CPA	477Kb / 11P	CoolMOS Power Transistor Rev. 2.0 2010-02-15
Inchange Semiconductor ...	IPW60R099CPA	376Kb / 2P	N-Channel MOSFET Transistor

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Descrição semelhante - IPW60R099CP_08

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