STL128DN datasheet(4/14 Pages) STMICROELECTRONICS

Nome de Peças	STL128DN

Descrição Electrónicos	High voltage fast-switching NPN power transistor

PDF	14 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STL128DN

4/14

Doc ID 13984 Rev 3

Electrical characteristics

Tcase = 25 °C unless otherwise specified

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off

current (VBE = 0)

VCE = 700 V

VCE = 700 V Tc = 125 °C

100

500

µA

ICEO

Collector cut-off

current (IB = 0)

VCE = 400 V

250

µA

V(BR)EBO

Emitter-base

breakdown voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

(1)

Collector-emitter

sustaining voltage

(IB = 0)

IC = 10 mA

400

VCE(sat)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %.

Collector-emitter

saturation voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

0.5

VBE(sat)

(1)

Base-emitter

saturation voltage

IC = 1 A

IB = 0.2 A

IC = 2 A

IB = 0.4 A

1.2

1.3

hFE

(1)

DC current gain

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 5 V

824

Diode forward voltage

IF = 1 A

2.5

Resistive load

Storage time

Fall time

IC = 1 A

IB1 = - IB2 = 0.2 A

VCC = 125 V

tp = 20 µs

4.5

0.4

µs

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