MJD112 datasheet(1/10 Pages) STMICROELECTRONICS

Nome de Peças	MJD112

Descrição Electrónicos	Complementary power Darlington transistors

PDF	10 Pages

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Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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1 / 10 page

January 2010

Doc ID 3540 Rev 3

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10

MJD112

MJD117

Complementary power Darlington transistors

Features

■ Good hFE linearity

■ High fT frequency

■ Monolithic Darlington configuration with

integrated antiparallel collector-emitter diode

Application

■ Linear and switching industrial equipment

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration.

.

Figure 1.

Internal schematic diagram

TO-252

1

3

TAB

(DPAK)

R1 typ. = 15 kΩ

R2 typ. = 100 Ω

Table 1.

Device summary

Order codes

Marking

Polarity

Package

Packaging

MJD112T4

MJD112

NPN

DPAK

Tape and reel

MJD117T4

MJD117

PNP

DPAK

Tape and reel

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Nº de peça semelhante - MJD112

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
KEC(Korea Electronics)	MJD112	394Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications

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Descrição semelhante - MJD112

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
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ON Semiconductor	NJVMJD112	153Kb / 10P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13
ON Semiconductor	MJD112	207Kb / 11P	Complementary Darlington Power Transistors November, 2013 ??Rev. 13

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MJD112 Folha de dados(PDF) 1 Page - STMicroelectronics

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