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PBLS2003S Folha de dados(PDF) 4 Page - NXP Semiconductors |
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PBLS2003S Folha de dados(HTML) 4 Page - NXP Semiconductors |
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4 / 16 page ![]() PBLS2003S_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 24 August 2009 4 of 16 NXP Semiconductors PBLS2003S 20 V PNP BISS loadswitch 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb (°C) −75 175 125 25 75 −25 006aaa808 1.0 0.5 1.5 2.0 Ptot (W) 0 (1) (2) (3) Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 180 K/W [2] - - 125 K/W [3] - - 85 K/W TR1; PNP low VCEsat (BISS) transistor Rth(j-sp) thermal resistance from junction to solder point - - 40 K/W |
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