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LMZ10503EXT Folha de dados(PDF) 1 Page - National Semiconductor (TI)

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Nome de Peças LMZ10503EXT
Descrição Electrónicos  3A SIMPLE SWITCHER짰 Power Module with 5.5V Maximum Input Voltage for Military and Rugged Applications
PDF  22 Pages
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Fabricante Electrônico  NSC [National Semiconductor (TI)]
Página de início  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMZ10503EXT Folha de dados(HTML) 1 Page - National Semiconductor (TI)

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LMZ10503EXT
July 30, 2010
3A SIMPLE SWITCHER® Power Module with 5.5V Maximum
Input Voltage for Military and Rugged Applications
Easy to Use 7 Pin Package
301182a4
TO-PMOD 7 Pin Package
10.16 x 13.77 x 4.57 mm (0.4 x 0.39 x 0.18 in)
θ
JA = 20°C/W, θJC = 1.9°C/W (Note 1)
RoHS Compliant
Electrical Specifications
15W maximum total output power
Up to 3A output current
Input voltage range 2.95V to 5.5V
Output voltage range 0.8V to 5V
±1.63% feedback voltage accuracy over temperature
Efficiency up to 96%
Key Features
Integrated shielded inductor
Flexible startup sequencing using external soft-start,
tracking, and precision enable
Protection against in-rush currents and faults such as input
UVLO and output short-circuit
-55°C to +125°C junction temperature operating range
Single exposed pad and standard pinout for easy
mounting and manufacturing
Pin-to-pin compatible with
LMZ10504EXT (4A/20W max)
LMZ10505EXT (5A/25W max)
Fully enable for WEBENCH® and Power Designer
Low output voltage ripple of 10 mV allows for powering
noise-sensitive transceiver and signaling ICs
Fast transient response for powering FPGAs and ASICs
Applications
Point-of-load conversions from 3.3V and 5V rails
Space constrained applications
Extreme temperatures/no air flow environments
Noise sensitive applications (i.e. transceiver, medical)
Performance Benefits
Operates at high ambient temperatures
Low radiated emissions (EMI) complies with EN55022
class B standard (Note 2)
Passes 10V/m radiated immunity EMI test standard
EN61000 4-3
Passes vibration standard
MIL-STD-883 Method 2007.2 Condition A
JESD22-B103B Condition 1
Passes drop standard
MIL-STD-883 Method 2002.3 Condition B
JESD22-B110 Condition B
System Performance
Current Derating (V
OUT = 3.3V)
301182a5
Efficiency (V
OUT = 3.3V)
30118271
Radiated Emissions (EN 55022, Class B)
301182a6
Note 1:
θ
JA measured on a 2.25” x 2.25” (5.8 cm x 5.8 cm) four layer board. Refer to PCB Layout Diagrams or Evaluation Board Application Note: AN-2074.
Note 2: EN 55022:2006, +A1:2007, FCC Part 15 Subpart B: 2007. See Figure 5 and layout for information on device under test.
© 2010 National Semiconductor Corporation
301182
www.national.com


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