Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

R32C Folha de dados(PDF) 91 Page - Renesas Technology Corp

Nome de Peças R32C
Descrição Electrónicos  RENESAS MCU
PDF  130 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  RENESAS [Renesas Technology Corp]
Página de início  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R32C Folha de dados(HTML) 91 Page - Renesas Technology Corp

Back Button R32C Datasheet HTML 87Page - Renesas Technology Corp R32C Datasheet HTML 88Page - Renesas Technology Corp R32C Datasheet HTML 89Page - Renesas Technology Corp R32C Datasheet HTML 90Page - Renesas Technology Corp R32C Datasheet HTML 91Page - Renesas Technology Corp R32C Datasheet HTML 92Page - Renesas Technology Corp R32C Datasheet HTML 93Page - Renesas Technology Corp R32C Datasheet HTML 94Page - Renesas Technology Corp R32C Datasheet HTML 95Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 91 / 130 page
background image
REJ03B0299-0100
Rev.1.00
Page 91 of 127
Jul 16, 2010
R32C/118A Group
5. Electrical Characteristics
Notes:
1.
Program/erase definition
This value represents the number of erasures per block.
If the flash memory is programmed/erased n times, each block can be erased n times.
i.e. If 4-word write is performed in 512 different addresses in the block A of 4 Kbyte and then the
block is erased, it is considered the programming/erasure is performed just once.
However a write in the same address more than once for one erasure is disabled (overwrite
disabled).
2.
The data retention time includes the periods when the supply voltage is not applied and no clock is
provided.
3.
Please contact a Renesas Electronics sales office regarding data retention time other than the
above.
Table 5.7
RAM Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Measurement
condition
Value
Unit
Min.
Typ.
Max.
VRDR
RAM data retention voltage
in stop mode
2.0
V
Table 5.8
Flash Memory Electrical Characteristics
(VCC = 3.0 to 5.5 V, VSS =0V, and Ta = Topr, unless otherwise noted)
Symbol
Characteristic
Value
Unit
Min.
Typ.
Max.
—
Programming and erasure endurance of flash
memory (1)
Program area
1000
times
Data area
10000
times
—
4-word program time
Program area
150
900
µs
Data area
300
1700
µs
—
Lock bit-program time
Program area
70
500
µs
Data area
140
1000
µs
—
Block erasure time
4 Kbyte block
0.12
3.0
s
32 Kbyte block
0.17
3.0
s
64 Kbyte block
0.20
3.0
s
tSUSP
Suspend latency
250
µs
—
Data retention (2)
Ta = 55°C (3)
10
years



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Folha de dados Download

Go To PDF Page


Ligação URL



ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   Link para a ficha técnica    |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com