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KM44C4103C Folha de dados(PDF) 4 Page - Samsung semiconductor

Nome de Peças KM44C4103C
Descrição Electrónicos  4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
PDF  20 Pages
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Fabricante Electrônico  SAMSUNG [Samsung semiconductor]
Página de início  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM44C4103C Folha de dados(HTML) 4 Page - Samsung semiconductor

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CMOS DRAM
KM44C4003C, KM44C4103C
*Note :
ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one fast page mode cycle time, tPC.
DC AND OPERATING CHARACTERISTICS (Continued)
ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don
′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns
ICCS : Self Refresh Current
RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,
DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open
Symbol
Power
Speed
Max
Units
KM44C4003C
KM44C4103C
ICC1
Don
′t care
-5
-6
90
80
110
100
mA
mA
mA
ICC2
Normal
L
Don
′t care
2
1
2
1
mA
mA
ICC3
Don
′t care
-5
-6
90
80
110
100
mA
mA
mA
ICC4
Don
′t care
-5
-6
80
70
90
80
mA
mA
mA
ICC5
Normal
L
Don
′t care
1
250
1
250
mA
uA
ICC6
Don
′t care
-5
-6
90
80
110
100
mA
mA
mA
ICC7
L
Don
′t care
300
300
uA
ICCS
L
Don
′t care
250
250
uA



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