Preliminary
5-56
RF2485
Rev A3 010820
5
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
VDC
Input LO and RF Levels
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
LO Input
T = 25°C, VDD=5VDC, I&Q inputs=2VPP
Frequency Range
200
600
MHz
Power Level
-3
+6
dBm
Input VSWR
1.2:1
With external 50
Ω termination; see applica-
tion schematic, note A.
Modulation Input
Frequency Range
DC
100
MHz
Reference Voltage (VREF)2.0
3.0
V
Modulation (I&Q)
VREF±0.7
V
I & Q signals for -0.5dBm output power.
Modulation (I&Q)
VREF±1.5
V
I & Q signals for +5dBm output power.
Maximum Modulation (I&Q)
VREF±2.5
V
In-phase and quadrature signals.
Input Resistance
3000
Ω
DC Offset
50
150
mV
ISIG-IREF and QSIG-QREF; to achieve maxi-
mum carrier suppression.
Amplitude Error (I/Q)
0.2
dB
Quadrature Phase Error
±1
±3
°
From 350MHz to 450MHz.
RF Output
VDD=5V, LO Power=0dBm, LO
Freq= 400MHz, SSB, I&Q input= 0.7VP
Output Power
-1.5
-0.5
dBm
Output Impedance
50
Ω
Output VSWR
1.5:1
Broadband Noise Floor
-149
-147
dBm/Hz
At 5MHz offset
Sideband Suppression
30
43
dB
Unadjusted
Carrier Suppression
20
26
dB
Modulation DC offset can be externally
adjusted for optimum suppression. Suppres-
sion is typically better than 25dB without
adjustment.
IM3
-40
-52
dBc
TETRA Modulation
Channel Power
-3.0
-2.5
-2.0
dBm
1.7VP-P TETRA Modulation
LO, 450MHz@ -5.0dBm, VREF 2.5V
Adjacent Channel Power
Rejection
dBc
VCC= 5.0V
25kHz
-47.0
-48.0
-49.0
dBc
50kHz
-67.0
-68.5
-70.0
dBc
Power Supply
Voltage
5
V
Specifications
4.5
5.5
V
Operating Limits
Current
28
39
mA
Operating
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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