ü
4-183
4
Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
2
GND1
3
RF IN
4
RF OUT
5
GND2
Logic
Control
1
VREF/PD
SELECT
6
RF2369
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
• CDMA/Cellular Bypass LNA
• CDMA/Cellular Bypass Driver Amplifier
• General Purpose Amplification
• Commercial and Consumer Systems
The RF2369 is a switchable low noise amplifier with a
very high dynamic range designed for digital cellular
applications. The device functions as an outstanding front
end low noise amplifier. When used as an LNA, the bias
current can be set externally. When used as a PA driver,
the IC can operate directly from a single cell Li-ion battery
and includes a power down feature that can be used to
completely turn off the device. The IC is featured in a
standard SOT 6-lead plastic package.
• Low Noise and High Intercept Point
• Adjustable Bias Current
• LNA Bypass Loss is +2dB
• 150MHz to 2500MHz Operation
• Meets IMD Tests with Two Gain States/
Single Logic Control Line
RF2369
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2369 PCBA
Fully Assembled Evaluation Board (LNA)
4
Rev A3 010720
0.90
0.70
0.10 MAX.
1.30
1.00
3.10
2.70
0.37 MIN.
3.00
2.60
1.90
0.25
0.10
0.50
0.35
1.80
1.40
9°
*WhenPin1is in
upper left, text
reads downward
(as shown).
All dimensions in mm.
1°
Package Style: SOT 6-Lead
Portuguese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
