IP2010PBF datasheet(1/1 Pages) IRF

Nome de Peças	IP2010PBF

Descrição Electrónicos	High Frequency GaN-Based Integrated Power Stage

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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iP2010PbF

www.irf.com

High Frequency GaN-Based Integrated

Power Stage

Typical Application

Features

•

Input voltage range of 7V to 13.2V

•

Output voltage range of 0.6V to 5.5V

•

Output current up to 30A

•

Benchmark peak and full load efficiency –

no heat sink required

•

Operation up to 3MHz

•

Ultrafast, PowIRtuneTM gate driver

•

Wireless, low noise flip-chip design

•

Industry-standard TTL compatible Enable

and PWM inputs

•

Small footprint LGA package (7.7mm x

6.5mm x 1.7mm)

•

Pin compatible with iP2011

Applications

•

Server, Storage and Netcom POL

•

General DC/DC Converters

Description

The iP2010 is a fully optimized, high frequency

power

stage

solution

for

synchronous

buck

applications utilizing IR’s Gallium Nitride (GaN)-

based power device technology platform.

The iP2010 integrates a highly sophisticated, ultra

fast PowIRtune driver IC matched to a multi-switch

monolithic GaN-based power device. These devices

are mounted in a completely wireless package

platform to deliver higher efficiency and more than

double the switching frequency of state-of-the-art

silicon-based integrated power stage devices.

With a switching capability up to 3MHz, the iP2010

enables designers to dramatically reduce the value

and size of output capacitors and inductors where

space is at premium.

The device can also be

configured to operate at a lower switching frequency

for applications that require the highest possible

efficiencies.

PD-97461

GaNpowIRTM

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