PDTA123JS datasheet(5/14 Pages) NXP

Nome de Peças	PDTA123JS

Descrição Electrónicos	PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

PDF	14 Pages

Scroll/Zoom	100%

Fabricante Electrônico	NXP [NXP Semiconductors]

Página de início	http://www.nxp.com

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5 / 14 page

2004 Aug 02

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 47 kΩ

PDTA123J series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0

−

−100

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0

−

−1

μA

VCE = −30 V; IB = 0; Tj = 150 °C

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−180

μA

hFE

DC current gain

VCE = −5 V; IC = −10 mA

100

−

VCEsat

collector-emitter saturation voltage

IC = −5 mA; IB = −0.25 mA

−

−100

Vi(off)

input-off voltage

IC = −100 μA; VCE = −5 V

−

−0.6

−0.5

Vi(on)

input-on voltage

IC = −5 mA; VCE = −0.3 V

−1.1

−0.75

−

input resistor

1.54

2.2

2.86

resistor ratio

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz −

−

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