GTL2010BS datasheet(9/20 Pages) NXP

9 / 20 page

GTL2010_6

Product data sheet

Rev. 06 — 3 March 2008

9 of 20

NXP Semiconductors

GTL2010

10-bit bidirectional low voltage translator

11. Static characteristics

[1]

All typical values are measured at Tamb =25 °C.

[2]

Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is

determined by the lowest voltage of the two (Sn or Dn) terminals.

Table 9.

Static characteristics

Tamb = −40 °C to +85 °C, unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

VOL

LOW-level output voltage

VCC = 3.0 V; VSREF = 1.365 V;

VSn or VDn = 0.175 V; Iclamp = 15.2 mA

260

350

VIK

input clamping voltage

II = −18 mA; VGREF =0V

−1.2

ILI(G)

gate input leakage current VI =5V; VGREF =0V

µA

Cig

input capacitance at gate

VI = 3 V or 0 V

Cio(off)

off-state input/output

capacitance

VO = 3 V or 0 V; VGREF = 0 V

7.4

Cio(on)

on-state input/output

capacitance

VO = 3 V or 0 V; VGREF = 3 V

18.6

Ron

ON-state resistance

VI =0V; IO =64mA

[2]

VGREF = 4.5 V

3.5

Ω

VGREF = 3 V

4.4

Ω

VGREF = 2.3 V

5.5

Ω

VGREF = 1.5 V

115

Ω

VI =0V; IO = 30 mA; VGREF = 1.5 V

[2] -9

Ω

VI = 2.4 V; IO = 15 mA; VGREF = 4.5 V

[2] -7

Ω

VI = 2.4 V; IO = 15 mA; VGREF =3V

[2] -58

Ω

VI = 1.7 V; IO = 15 mA; VGREF = 2.3 V

[2] -50

Ω

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