SSM4800AGM datasheet(4/5 Pages) SSC

Nome de Peças	SSM4800AGM

Descrição Electrónicos	N-Channel Enhancement Mode Power Mosfet

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SSC [Silicon Standard Corp.]

Página de início	http://www.siliconstandard.com

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4 / 5 page

02/09/2007 Rev.1.00

www.SiliconStandard.com

SSM4800AGM

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

4.5V

QGS

QGD

Charge

Q G , Total Gate Charge (nC)

I D =9 A

V DS =25 V

V DS =20 V

V DS =15 V

100

1000

131721

2529

V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

100

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthia=125 ℃/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.01

0.1

100

0.1

100

V DS , Drain-to-Source Voltage (V)

T A =25

o C

Single Pulse

100us

1ms

10ms

100ms

V GS , Gate-to-Source Voltage (V)

T j =125

o C

T j =25

o C

V DS =5V

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