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SSM95T07GP Folha de dados(PDF) 4 Page - Silicon Standard Corp.

Nome de Peças SSM95T07GP
Descrição Electrónicos  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  6 Pages
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Fabricante Electrônico  SSC [Silicon Standard Corp.]
Página de início  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM95T07GP Folha de dados(HTML) 4 Page - Silicon Standard Corp.

  SSM95T07GP Datasheet HTML 1Page - Silicon Standard Corp. SSM95T07GP Datasheet HTML 2Page - Silicon Standard Corp. SSM95T07GP Datasheet HTML 3Page - Silicon Standard Corp. SSM95T07GP Datasheet HTML 4Page - Silicon Standard Corp. SSM95T07GP Datasheet HTML 5Page - Silicon Standard Corp. SSM95T07GP Datasheet HTML 6Page - Silicon Standard Corp.  
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07/11/2007 Rev.1.00
www.SiliconStandard.com
4
SSM95T07GP
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
Q G , Total Gate Charge (nC)
V DS =40 V
V DS =48 V
V DS =64 V
I D =80 A
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC



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