SSM95T06GS datasheet(4/5 Pages) SSC

Nome de Peças	SSM95T06GS

Descrição Electrónicos	N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	SSC [Silicon Standard Corp.]

Página de início	http://www.siliconstandard.com

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SSM95T06GP,S

2/16/2005 Rev.1.10

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

100

120

Q G , Total Gate Charge (nC)

V DS =30 V

V DS =38 V

V DS =48 V

I D =45 A

4.5V

QGS

QGD

Charge

100

1000

10000

131721

2529

V DS ,Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

100

1000

0.1

100

1000

V DS , Drain-to-Source Voltage (V)

T c =25

o C

Single Pulse

100us

1ms

10ms

100ms

104

130

V GS , Gate-to-Source Voltage (V)

T j =150

o C

T j =25

o C

V DS =5V

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