HFS75N75 datasheet(3/7 Pages) SEMIHOW

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◎ SEMIHOW REV.A1,Dec 2008

Typical Characteristics

* Note

1. V

DS = 40V

2. 250

µs Pulse Test

-55

150

GS , Gate-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

150

* Note :

1. V

GS = 0V

2. 250

µs Pulse Test

SD , Source-Drain Voltage [V]

-1

2000

4000

6000

8000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

100

DS = 37.5V

DS =60V

* Note : I

D = 80.0 A

G, Total Gate Charge [nC]

DS = 15V

100

125

150

175

200

0.008

0.009

0.010

0.011

0.012

0.013

0.014

* Note : T

J = 25

GS = 20V

GS = 10V

D , Drain Current [A]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

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