HFS5N65S datasheet(3/7 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,Oct 2009

DS, Drain-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150

* Note :

1. V

GS = 0V

2. 250

µs Pulse Test

SD , Source-Drain Voltage [V]

-1

* Note

1. V

DS = 50V

2. 250

µs Pulse Test

-55

150

GS , Gate-Source Voltage [V]

-1

200

400

600

800

1000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

* Note : T

J = 25

GS = 20V

GS = 10V

D , Drain Current [A]

G, Total Gate Charge [nC]

* Note : I

D = 4.2A

DS = 325V

DS = 130V

DS = 520V

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