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c

2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

Data Sheet

RZL035P01

Measurement circuits

Fig.1-1 Switching Time Measurement Circuit

D.U.T.

Fig.1-2 Switching Waveforms

90%

90%

90%

10%

10%

10%

Pulse width

50%

50%

Fig.2-1 Gate Charge Measurement Circuit

D.U.T.

Fig.2-2 Gate Charge Waveform

Charge

Notice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

0

50

100

150

200

250

02

4

6

8

10

Ta=25°C

Pulsed

0.01

0.1

1

10

00.5

1

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0

1

2

3

4

5

0

5

10

15

20

Ta=25°C

Pulsed

100

1000

10000

0.01

0.1

1

10

100

Coss

Crss

Ta=25°C

f=1MHz

Ciss

1

10

100

1000

10000

0.01

0.1

1

10

Pulsed

Fig.10 Reverse Drain Current

　　　vs. Sourse-Drain Voltage

Fig.11 Static Drain-Source On-State

　　　　　Resistance vs. Gate Source Voltage

Fig.13 Dynamic Input Characteristics

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

Fig.12 Switching Characteristics

TOTAL GATE CHARGE : Qg [nC]