MV71001 – MV71013

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

GaAs Multiplier Diodes

Frequency Multiplier

TM

®

Copyright

 2007

Rev: 2009-01-19

Features

Part

Number

± 10%

Min.

10 A (V)

Typ.

MV71001

0.2

2.1

15

8000

MV71002

0.3

2.4

15

8000

MV71003

0.4

2.6

15

7500

MV71004

0.5

2.8

15

7000

MV71005

0.3

2.8

30

8000

MV71006

0.4

3.1

30

7500

MV71007

0.5

3.4

30

7000

MV71008

0.6

3.6

30

6500

MV71009

0.7

3.7

30

6000

MV71010

0.8

3.8

30

6000

MV71011

0.9

3.9

30

5700

MV71012

1.0

4.0

30

5700

MV71013

1.2

4.2

30

5000

●

High Efficiency

●

Low Parasitic Packages

●

Low Thermal Resistance

Applications

●

High-Power mmW Transceivers

●

mmW Phase Arrays

●

Drivers for Power Amplifiers

●

Frequency Multipliers to 110 GHz and

Beyond

Specifications @ 25°C

Description

Microsemi’s GaAs frequency multiplier diodes are

fabricated from

epitaxial

layers

grown

at

using

Chemical Vapor Deposition. The layers are processed at

using proprietary techniques resulting in high Q factor

and repeatable tuning curves. The diodes are available

in a variety of microwave ceramic packages or chips for

operation from UHF to mmW frequencies.

Maximum Ratings

Reverse Voltage

Breakdown Voltage

Forward Current

50 mA @ 25°C

Incident Power

+23 dBm @ 25°C

Operating Temperature

-55°C to +175°C

Storage Temperature

-55°C to +200°C

1

Capacitance is specified at 1 MHz.

2

Measured by DeLoach Technique and referenced to 50 MHz.

3

Tightened tolerances available upon request.

4

Package capacitance are not included in above specifications.

5

depending upon case style selection.

IMPORTANT:

For the most current data, consult our website: www.MICROSEMI.com

Specifications are subject to change. Consult factory for the latest information

.

These devices are ESD sensitive and must be handled using ESD precautions.

supplied with a RoHS complaint Gold finish

.