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APTM120H80FT3G Folha de dados(PDF) 1 Page - Microsemi Corporation

Nome de Peças APTM120H80FT3G
Descrição Electrónicos  Full bridge MOSFET Power Module
PDF  5 Pages
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120H80FT3G Folha de dados(HTML) 1 Page - Microsemi Corporation

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APTM120H80FT3G
www.microsemi.com
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29
30
28 27 26
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32
31
10
19
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25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
14
ID
Continuous Drain Current
Tc = 80°C
10
IDM
Pulsed Drain current
90
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
960
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
12
A
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 8™ Fast FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Kelvin source for easy drive
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full bridge
MOSFET Power Module
VDSS = 1200V
RDSon = 800mΩ typ @ Tj = 25°C
ID = 14A @ Tc = 25°C


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