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PSII30/06 Folha de dados(PDF) 4 Page - Powersem GmbH

Nome de Peças PSII30/06
Descrição Electrónicos  IGBT Module
PDF  4 Pages
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Fabricante Electrônico  POWERSEM [Powersem GmbH]
Página de início  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSII30/06 Folha de dados(HTML) 4 Page - Powersem GmbH

  PSII30/06 Datasheet HTML 1Page - Powersem GmbH PSII30/06 Datasheet HTML 2Page - Powersem GmbH PSII30/06 Datasheet HTML 3Page - Powersem GmbH PSII30/06 Datasheet HTML 4Page - Powersem GmbH  
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 4 / 4 page
background image
tentative
data
sheet
product
still
under
development
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
020
40
60
0
2
4
6
8
0
20
40
60
80
020
40
60
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
10203040
50607080
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0
1020
304050
607080
0
1
2
3
4
20
40
60
80
single pulse
V
CE = 300V
V
GE = ±15V
R
G = 33Ω
T
VJ = 125°C
VDI...50-06P1
V
CE = 300V
V
GE = ±15V
I
C
= 30A
T
VJ = 125°C
0
100
200
300
400
500
600
700
0
20
40
60
80
R
G = 33 Ω
T
VJ = 125°C
V
CE = 300V
V
GE = ±15V
R
G = 33Ω
T
VJ = 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
ZthJC
IGBT
V
A
mJ
ns
ns
mJ
25T60
25T60
25T60
25T60
25T60
V
CE = 300 V
V
GE = ±15 V
I
C
= 30 A
T
VJ = 125°C
diode



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