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LTC4449 Folha de dados(PDF) 3 Page - Linear Technology

Nome de Peças LTC4449
Descrição Electrónicos  High Speed Synchronous N-Channel MOSFET Driver
PDF  12 Pages
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Fabricante Electrônico  LINER [Linear Technology]
Página de início  http://www.linear.com
Logo LINER - Linear Technology

LTC4449 Folha de dados(HTML) 3 Page - Linear Technology

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LTC4449
3
4449f
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4449I is guaranteed to meet specifications over the full
–40°C to 125°C operating junction temperature range. The LTC4449E is
guaranteed to meet specifications from 0°C to 85°C with specifications
over the –40°C to 85°C operating junction temperature range assured by
design, characterization and correlation with statistical process controls.
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at TA = 25°C. VCC = VLOGIC = VBOOST = 5V, VTS = GND = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Input Signal (IN)
VIH(TG)
TG Turn-On Input Threshold
VLOGIC ≥ 5V, IN Rising
VLOGIC = 3.3V, IN Rising
l
l
3
1.9
3.5
2.2
4
2.6
V
V
VIL(TG)
TG Turn-Off Input Threshold
VLOGIC ≥ 5V, IN Falling
VLOGIC = 3.3V, IN Falling
l
l
2.75
1.8
3.25
2.09
3.75
2.5
V
V
VIH(BG)
BG Turn-On Input Threshold
VLOGIC ≥ 5V, IN Falling
VLOGIC = 3.3V, IN Falling
l
l
0.8
0.8
1.25
1.1
1.6
1.4
V
V
VIL(BG)
BG Turn-Off Input Theshold
VLOGIC ≥ 5V, IN Rising
VLOGIC = 3.3V, IN Rising
l
l
1.05
0.9
1.5
1.21
1.85
1.5
V
V
IIN(SD)
Maximum Current Into or Out of IN in
Shutdown Mode
VLOGIC ≥ 5V, IN Floating
VLOGIC = 3.3V, IN Floating
150
75
300
150
μA
μA
High Side Gate Driver Output (TG)
VOH(TG)
TG High Output Voltage
ITG = –100mA, VOH(TG) = VBOOST – VTG
140
mV
VOL(TG)
TG Low Output Voltage
ITG = 100mA, VOL(TG) = VTG – VTS
80
mV
IPU(TG)
TG Peak Pull-Up Current
l
2
3.2
A
IPD(TG)
TG Peak Pull-Down Current
l
1.5
2.4
A
Low Side Gate Driver Output (BG)
VOH(BG)
BG High Output Voltage
IBG = –100mA, VOH(BG) = VCC – VBG
100
mV
VOL(BG)
BG Low Output Voltage
IBG = 100mA
100
mV
IPU(BG)
BG Peak Pull-Up Current
l
2
3.2
A
IPD(BG)
BG Peak Pull-Down Current
l
3
4.5
A
Switching Time
tPLH(TG)
BG Low to TG High Propagation Delay
14
ns
tPHL(TG)
IN Low to TG Low Propagation Delay
13
ns
tPLH(BG)
TG Low to BG High Propagation Delay
13
ns
tPHL(BG)
IN High to BG Low Propagation Delay
11
ns
tr(TG)
TG Output Risetime
10% to 90%, CL = 3nF
8
ns
tf(TG)
TG Output Falltime
10% to 90%, CL = 3nF
7
ns
tr(BG)
BG Output Risetime
10% to 90%, CL = 3nF
7
ns
tf(BG)
BG Output Falltime
10% to 90%, CL = 3nF
4
ns
The junction temperature TJ is calculated from the ambient temperature TA
and power dissipation PD according to the following formula:
TJ = TA + (PD • 64°C/W)
Note 3: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.



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