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BAS85 Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Nome de Peças BAS85
Descrição Electrónicos  200mW Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes
PDF  1 Pages
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Fabricante Electrônico  TSC [Taiwan Semiconductor Company, Ltd]
Página de início  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

BAS85 Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  BAS85 Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd  
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Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
BAS85
200mW Hermetically Sealed Glass Fast
Switching Schottky Barrier Diodes
MINI MELF
Features
Low forward voltage drop
LL-34( Mini-MELF) package
Through-Hole device type mounting
Hermetically sealed glass
Compression bonded construction
All external surfaces are corrosion
resistant and terminals are readily
solderable
RoHS compliant
Solder Hot Dip Tin (Sn) lead finish
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
Units
Power Dissipation
Pd
200
mW
Repetitive Peak Reverse Voltage
VRRM
30
V
Maximum DC Blocking Voltage
VR
30
V
Average Forward Rectified Current
IF(AV)
200
mA
Peak Forward Surge Current
IFSM
4
A
Operating Junction Temperature
TJ
125
OC
Storage Temperature Range
TSTG
-65 to + 125
OC
Electrical Characteristics
Type Number
Symbol
Min
Typ
Max
Units
Breakdown Voltage
IR=10uA
BV
30
V
Reverse Leakage Current
VR=25V
IR
2
uA
Forward Voltage
IF=0.1mA
IF=1.0mA
IF= 10mA
IF=30mA
IF =100mA
VF
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(Note 1)
Trr
5
nS
Junction Capacitance
VR=1V, f=1.0MHz
Cj
10
pF
Notes: 1. Reverse Recovery Test Conditions: IF= IR =10mA, RL=100Ω, IRR=1mA
Version: A08
Preliminary


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