TLBD1052(T20),TLEGD1052(T20)

2008-01-10

2

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Forward current derating

Forward Voltage VF

Reverse Current IR

Product Name

Min.

Typ.

Max.

IF

Max.

VR

TLBD1052

2.7

3.3

4.0

TLEGD1052

2.7

3.3

4.0

20

10

4

Unit

V

mA

µA

V

Product Name

Forward Current

Please see Note 1

Reverse Voltage

Power Dissipation

Operation

Temperature

Storage

Temperature

TLBD1052

−40~85

TLEGD1052

30

4

120

−40~100

−40~110

Ambient temperature

Ta (°C)

0

0

20

40

60

80

100

120

5

10

15

20

25

30

35

TLBD1052

TLEGD1052