CHA2069RAF

Ref. : DSCHA2069RAF2169 -18-June-02-

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Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

18-31GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The monolithic microwave IC (MMIC) in the

package is a three-stage self biased wide

band monolithic low noise amplifier.

The MMIC is manufactured with a standard

PM-HEMT process: 0.25µm gate length,

via holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in a new SMD leadless chip

carrier.

Main Features

■ Broad band performance: 18-31GHz

■ Gain = 21dB (typical)

■ Noise Figure 3.0 dB (typical for f<26GHz)

■ Return loss < -6dB

■ SMD leadless package

■ Dimensions: 5.08 x 5.08 x 0.97 mm

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SMD Package Dimensions

Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic

Semiconductors. It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view).

ATTENTION: The dot on the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the

location of PIN 1.