BU508DF datasheet(2/2 Pages) COMSET

Nome de Peças	BU508DF

Descrição Electrónicos	SILICON DIFFUSED POWER TRANSISTORS

PDF	2 Pages

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Fabricante Electrônico	COMSET [Comset Semiconductor]

Página de início	http://comset.halfin.com

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COMSET SEMICONDUCTORS

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ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCE= VCESM= 1500 V , VBE= 0

ICES

Collector Cutoff Current

VCE= VCESM= 1500 V , VBE= 0 ,Tj =125°C

VCE0(SUS)

Collector-Emitter

Sustaining Voltage

IC=0.1A , IB=0, L=25mH

700

IEBO

Emitter Cutoff Current

VEB=6.0 V, IC=0

VCE(SAT)

Collector-Emitter

saturation Voltage

IC=4.5A , IB=2 A

1.0

VBE(SAT)

Base-Emitter saturation

Voltage

IC=4.5 A , IB=2 A

1.3

Forward Voltage

IF=4.5 A

-1.6

HFE

DC Current Gain

IC=100 mA , VCE=5.0 V

513

Transition frequency

VCE=5 V , IC=0.1 A, f=5MHz

-7

MHz

Collector capacitance

IE= ie= 0, VCB=10 V, f=1 MHz

125

Storage Time

6.5

Fall Time

-VIM= 4V, LB= 6µH

IC=ICsat, IB= 1.4A(-dIB/dt= 0.6A/µs)

-0.7

µs

MECHANICAL DATA CASE SOT199

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

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