EM68932DVKB datasheet(36/40 Pages) ETRON

Nome de Peças	EM68932DVKB

Descrição Electrónicos	4M x 32 Mobile DDR Synchronous DRAM (SDRAM)

PDF	40 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ETRON [Etron Technology, Inc.]

Página de início	http://www.etron.com

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36 / 40 page

EtronTech

EM68932DVKB

Etron Confidential

Rev. 1.0

Aug. 2009

Figure 29. Interrupting Write to Read

Don’t Care

WRITE

NOP

READ

NOP

BA, Col b

BA, Col n

DQS

(1) DI b = Data In to column b. DO n = Data Out from column n.

(2) An interrupted burst of 4 is shown, 2 data elements are written.

3 subsequent elements of Data In are applied in the programmed order following DI b.

(3) tWTR is referenced from the positive clock edge after the last Data In pair.

(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)

(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.

DI b

tDQSS max

Command

Address

tWTR

CL = 3

NOP

Figure 30. Non Interrupting Write to Precharge

Don’t Care

WRITE

NOP

PRE

BA, Col b

BA a

(or all)

(1) DI b = Data In to column b.

3 subsequent elements of Data In are applied in the programmed order following DI b.

(2) A non-interrupted burst of 4 is shown.

(3) tWR is referenced from the positive clock edge after the last Data in pair.

(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)

DI b

Command

Address

DQS

tDQSS max

tWR

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