IRLS3036PBF datasheet(2/10 Pages) IRF

2 / 10 page

IRLS/SL3036PbF

www.irf.com

Coss eff. (TR) is a fixed capacitance that gives the same charging time as

Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniquea refer to applocation

note # AN- 994 echniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C.

Limited by TJmax, see Fig. 14, 15, 22a, 22b for typical repetitive

avalanche performance.

RθJC value shown is at time zero.

Notes:

Calcuted continuous current based on maximum allowable junction

temperature Bond wire current limit is 195A. Note that current

limitation arising from heating of the device leds may occur with

some lead mounting arrangements.

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.021mH

RG = 25Ω, IAS = 165A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 165A, di/dt ≤ 430A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

––– 0.061 ––– V/°C

–––

1.9

2.4

–––

2.2

2.8

VGS(th)

Gate Threshold Voltage

1.0

–––

2.5

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

RG(int)

Internal Gate Resistance

–––

2.0

–––

Ω

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

340

–––

Total Gate Charge

–––

140

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

220

–––

td(off)

Turn-Off Delay Time

–––

110

–––

Fall Time

–––

110

–––

Ciss

Input Capacitance

––– 11210 –––

Coss

Output Capacitance

–––

1020

–––

Crss

Reverse Transfer Capacitance

–––

500

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)iÃ––– 1430 –––

Coss eff. (TR) Effective Output Capacitance (Time Related) h

–––

1880

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

(Body Diode)

ISM

Pulsed Source Current

–––

(Body Diode)Ãe

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 51V,

–––

TJ = 125°C

IF = 165A

Qrr

Reverse Recovery Charge

–––

310

–––

TJ = 25°C

di/dt = 100A/µs g

–––

360

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

4.4

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VGS = -16V

showing the

VDS = 30V

Conditions

VGS = 4.5V g

VGS = 0V

VDS = 50V

ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 48V i

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 5mAd

VGS = 10V, ID = 165A g

VDS = VGS, ID = 250µA

VDS = 60V, VGS = 0V

VDS = 60V, VGS = 0V, TJ = 125°C

VGS = 0V, VDS = 0V to 48V h

MOSFET symbol

TJ = 25°C, IS = 165A, VGS = 0V g

integral reverse

p-n junction diode.

VGS = 16V

µA

RDS(on)

Static Drain-to-Source On-Resistance

270

1100

VGS = 4.5V, ID = 140A g

mΩ

ID = 165A

RG = 2.1

Ω

VGS = 4.5V g

VDD = 39V

ID = 165A, VDS =0V, VGS = 4.5V

Conditions

VDS = 10V, ID = 165A

ID = 165A

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