PA84 datasheet(2/5 Pages) CIRRUS

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P r o d u c t I n n o v a t i o n F r o m

PA84 • PA84A • PA84S

PA84U

NOTES: *

The specification of PA84A is identical to the specification for PA84/PA84S in applicable column to the left.

1. Signal slew rates at pins 5 and 6 must be limited to less than 1V/ns to avoid damage. When faster waveforms are unavoidable,

resistors in series with those pins, limiting current to 150mA will protect the amplifier from damage.

2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF.

3. The power supply voltage for all tests is ±150V, unless otherwise noted as a test condition.

4. Doubles for every 10°C of temperature increase.

5. +V

S and –VS denote the positive and negative power supply rail respectively.

6. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

S to –VS

300V

OUTPUT CURRENT, within SOA

Internally Limited

POWER DISSIPATION, internal at T

C = 25°C

17.5W

INPUT VOLTAGE, differential PA84/PA84A1

±300V

INPUT VOLTAGE, differential PA84S

±50V

INPUT VOLTAGE, common mode1

±V

TEMPERATURE, pins for 10s max (solder)

300°C

TEMPERATURE, junction2

175°C

TEMPERATURE RANGE, storage

–65 to +150°C

OPERATING TEMPERATURE RANGE, case

–55 to +125°C

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION

PA84/PA84S

PA84A

PARAMETER

TEST CONDITIONS 3

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

C = 25°C

±1.5

±3

±.5

±1

OFFSET VOLTAGE, vs. temperature

C = –25° to +85°C

±10

±25

±5

±10

µV/°C

OFFSET VOLTAGE, vs. supply

C = 25°C

±.5

±.2

µV/V

OFFSET VOLTAGE, vs. time

C = 25°C

±75

µV/√kh

BIAS CURRENT, initial4

C = 25°C

BIAS CURRENT, vs. supply

C = 25°C

.01

pA/V

OFFSET CURRENT, initial4

C = 25°C

±2.5

±50

±1.5

±10

OFFSET CURRENT, vs. supply

C = 25°C

±.01

pA/V

INPUT IMPEDANCE, DC

C = 25°C

1011

INPUT CAPACITANCE

C = –25° to +85°C

COMMON MODE VOLTAGE RANGE5

C = –25° to +85°C

±V

S–10

±V

S–8.5

COMMON MODE REJECTION, DC

C = –25° to +85°C

130

GAIN

OPEN LOOP GAIN at 10Hz

C = 25°C, RL = ∞

120

OPEN LOOP GAIN at 10Hz.

C = 25°C, RL = 3.5KΩ

100

118

GAIN BANDWIDTH PRODUCT@ 1MHz T

C = 25°C, RL = 3.5KΩ, RC = 20KΩ

MHz

POWER BANDWIDTH, high gain

C = 25°C, RL = 3.5KΩ, RC = 20KΩ

250

180

kHz

POWER BANDWIDTH, low gain

C = 25°C, RL = 3.5KΩ, RC = 20KΩ

120

kHz

OUTPUT

VOLTAGE SWING5

C = 25°C, IO = ±40mA

±V

S–7

±V

S–3

VOLTAGE SWING5

C = –25° to +85°C, IO = ±15mA

±V

S–5

±V

S–2

CURRENT, peak

C = 25°C

CURRENT, short circuit

C = 25°C

SLEW RATE, high gain

C = 25°C, RL = 3.5KΩ, RC = 20KΩ

200

150

V/µs

SLEW RATE, low gain

C = 25°C, RL = 3.5KΩ, RC = 2KΩ

125

V/µs

SETTLING TIME .01% at gain = 100

C = 25°C, RL = 3.5KΩ

PA84S

µs

SETTLING TIME .1% at gain = 100

C = 20KΩ, VIN = 2V step

ONLY

µs

SETTLING TIME .01% at gain = 100

C = 25°C, RL = 3.5KΩ

PA84/84A

µs

SETTLING TIME .1% at gain = 100

C = 20KΩ, VIN = 2V step

µs

POWER SUPPLY

VOLTAGE

C = –55°C to +125°C

±15

±150

CURRENT, quiescent

C = 25°C

5.5

7.5

THERMAL

RESISTANCE, AC, junction to case6

C = –55°C to +125°C, F > 60Hz

4.26

°C/W

RESISTANCE, DC, junction to case

C = –55°C to +125°C, F < 60Hz

6.22

8.57

°C/W

RESISTANCE, case to air

C = –55°C to +125°C

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

+85

°C

SPECIFICATIONS

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