Schottky Detector Diodes

Rev. V3

Schottky Detector Diodes

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

4

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

N Type Silicon Schottky Chip

Detector Diodes

These low barrier N type chip detector diodes are

suitable for use in microstrip applications.

They

feature sensitivity, and low l/f noise. These diodes

are listed by increasing frequency.

Model

Number

Case

Style

Test

Frequency

(GHz)

Nominal

1,5

(dBm)

Minimum Reverse

(Volts)

Nominal

3

Forward Voltage

(Volts)

Nominal

Capacitance

(pF)

MA40220

135

10.0

-52

2.0

0.3

0.12

MA40222

135

16.0

-52

2.0

0.3

0.09

P Type Silicon Schottky Chip

Detector Diodes

These low barrier P type chip detector diodes are

suitable for use in microstrip or stripline circuits.

These diodes are listed by increasing test fre-

quency.

Model

Number

Case

Style

Test

Frequency

(GHz)

Nominal

1,5

(dBm)

Minimum Reverse

(Volts)

Nominal

3

Forward Voltage

(Volts)

Nominal

Capacitance

(pF)

MA40270

135A

10.0

-52

4.0

0.4

0.12

MA40272

135A

16.0

-52

4.0

0.4

0.09

Notes:

1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC Bias is +20 µA. Wafers are evalu-

2. Voltage rating is measured at 10 µA reverse bias current.

3. Forward voltage is measured at a forward current of 1 mA.

4. Capacitance is measured at 0 V and 1 MHz.

Ohms and DC forward bias +20 µA