2SD2549 datasheet(1/2 Pages) ISC

Nome de Peças	2SD2549

Descrição Electrónicos	Silicon NPN Power Transistor

PDF	2 Pages

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD2549

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·Low Collector Saturation Voltgae-

: VCE(sat)= 0.7V(Max.)@ IC= 3A

·Good Linearity of hFE

APPLICATIONS

·Designed for power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

5

A

Collector Power Dissipation

@TC=25℃

20

PC

Collector Power Dissipation

@Ta=25℃

2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

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