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APT68GA60B Folha de dados(PDF) 2 Page - Microsemi Corporation |
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APT68GA60B Folha de dados(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page ![]() Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 E on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT68GA60B_S Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance V GE = 0V, VCE = 25V f = 1MHz 5230 pF C oes Output Capacitance 526 C res Reverse Transfer Capacitance 59 Q g Total Gate Charge 3 Gate Charge V GE = 15V V CE= 300V I C = 40A 198 nC Q ge Gate-Emitter Charge 32 Q gc Gate- Collector Charge 66 SSOA Switching Safe Operating Area T J = 150°C, RG = 4.7Ω 4 , V GE = 15V, L= 100uH, V CE = 600V 202 A t d(on) Turn-On Delay Time Inductive Switching (25°C) V CC = 400V V GE = 15V I C = 40A R G = 4.7Ω 4 T J = +25°C 21 ns t r Current Rise Time 27 t d(off) Turn-Off Delay Time 133 t f Current Fall Time 88 E on2 Turn-On Switching Energy 715 μJ E off Turn-Off Switching Energy 6 607 t d(on Turn-On Delay Time Inductive Switching (125°C) V CC = 400V V GE = 15V I C = 40A R G = 4.7Ω 4 T J = +125°C 20 ns t r Current Rise Time 26 t d(off) Turn-Off Delay Time 175 t f Current Fall Time 129 E on2 Turn-On Switching Energy 1117 μJ E off Turn-Off Switching Energy 6 1025 |
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