APTGT50TL601G

www.microsemi.com

7- 7

CR5 & CR6 Typical performance curve

Energy losses vs Collector Current

0

0.5

1

1.5

0

2040

6080

100

0

0.2

0.4

0.6

0.8

1

1.2

5

15

253545

5565

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

Forward Characteristic of diode

0

20

40

60

80

100

0

0.4

0.8

1.2

1.6

2

2.4

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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