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APT94N65B2C3 Folha de dados(PDF) 4 Page - Microsemi Corporation

Nome de Peças APT94N65B2C3
Descrição Electrónicos  Super Junction MOSFET
PDF  5 Pages
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Fabricante Electrônico  MICROSEMI [Microsemi Corporation]
Página de início  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT94N65B2C3 Folha de dados(HTML) 4 Page - Microsemi Corporation

  APT94N65B2C3 Datasheet HTML 1Page - Microsemi Corporation APT94N65B2C3 Datasheet HTML 2Page - Microsemi Corporation APT94N65B2C3 Datasheet HTML 3Page - Microsemi Corporation APT94N65B2C3 Datasheet HTML 4Page - Microsemi Corporation APT94N65B2C3 Datasheet HTML 5Page - Microsemi Corporation  
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Typical Performance Curves
APT94N65B2C3(G)
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
0
10
20
30
40
50
0
50
00
50
00
50
00
0
40
80
120
160
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
100
200
300
400
500
600
700
0
40
80
120
160
0
2
4
6
8
10
12
0
200
400
600
800
10
100
1,000
10,000
60,000
0
100
200
300
400
500
600
C
iss
T
J = =25°C
GRAPH REMOVED
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Capacitance vs Drain-To-Source Voltage
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 12, Gate Charges vs Gate-To-Source Voltage
I
D (A)
FIGURE 14, Delay Times vs Current
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 13, Source-Drain Diode Forward Voltage
I
D (A)
FIGURE 15 , Rise and Fall Times vs Current
R
G, GATE RESISTANCE (Ohms)
FIGURE 17, Switching Energy vs Gate Resistance
0
2000
4000
6000
8000
10000
12000
0
25
50
75
100
125
150
I
D (A)
FIGURE 16, Switching Energy vs Current
C
oss
C
rss
T
J= +150°C
I
D = 94A
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 94A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Maximum Safe Operating Area



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